| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669925 | Thin Solid Films | 2010 | 5 Pages |
Abstract
The junction temperature of homoepitaxial green and blue GaInN/GaN quantum well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescence mapping, and forward-voltage methods and compared to finite element simulations. Dies on GaN substrate and sapphire were analyzed under variable drive current up to 200 mA (246 A/cm2). At 100 mA, dies on bulk GaN remain as cool as 355 K (83 °C) while dies on sapphire heat up to 477 K (204 °C). The efficiency droop and spectral line shift in green LEDs with increasing current density can now be separated into electrical and thermal contributions.
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Physical Sciences and Engineering
Materials Science
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Authors
J. Senawiratne, A. Chatterjee, T. Detchprohm, W. Zhao, Y. Li, M. Zhu, Y. Xia, X. Li, J. Plawsky, C. Wetzel,