Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670046 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.R.C. Pinto, A.G. Rolo, A. Chahboun, R.J. Kashtiban, U. Bangert, M.J.M. Gomes,