Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films

The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p–n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p–n homojunction diode was obtained. It exhibits a distinct current–voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications.