Strain and temperature effects in indium–tin-oxide sensors

Indium–tin-oxide (ITO) thin films strain gages were prepared by reactive sputtering onto both high purity alumina and lanthanum stabilized zirconia substrates. We report the piezoresistive response of these ITO gages in the temperature range 350–1500 °C up to 1000 microstrain (με). Strain response and gage factors are reported for ITO in both tension and compression. The data suggest that not only is there an annealing component but also a strain component of the piezoresistive change with time at temperature. The effects in both tension and compression are reported.