Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670106 | Thin Solid Films | 2008 | 7 Pages |
Ternary semiconducting oxide compound magnesium indium oxide films (MgIn2O4), manifesting high transparency were prepared by metal organic chemical spray pyrolysis technique. Precursors prepared for various cationic ratios of Mg/In = 0.35, 0.40, 0.45 and 0.50 were thermally sprayed onto quartz substrates, decomposed at 450 °C and the spinel phase evolution was studied. X-ray diffraction, Rutherford backscattering and X-ray photoelectron spectroscopy studies have been conducted to confirm the formation of single-phase MgIn2O4 films with Mg/In ratio 0.50. From optical transmission studies, the observed optical band gaps varied from 3.18 to 3.86 eV (0.35 < Mg/In < 0.5). The electrical conductivity variations of these films were measured in the temperature range between 30 and 150 °C by four-probe technique (34.07–1.44 × 10− 5 S cm− 1) and the Hall coefficient showed n-type electrical conduction and high carrier concentration (0.16 × 1020–0.89 × 17 cm− 3).