Dependence of electrical and optical properties on thickness of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were prepared by reactive magnetron sputtering method. The dependence of optical and electrical properties on the thickness of IWO films was investigated. X-ray diffraction analysis indicates that the preferential orientation of IWO films varies from (111) to (100) with the increase of the thickness. The carrier mobility and resistivity are sensitive to the film thickness at a range of 50–150 nm. A sample with electrical resistivity of 2.7 × 10− 4 Ω cm, carrier mobility of 49 cm2 V− 1 s− 1, and transmission at the visible region of more than 80% was obtained.