Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3–PbTiO3 thin films deposited on LNO/Si substrates

(1 − x)Pb[Yb1/2Nb1/2]O3–xPbTiO3 (PYbN–PT, x = 0.5) (001) oriented thin films were deposited onto LaNiO3 (LNO)/Si (001) substrates by sol–gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 °C and 750 °C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 °C/s and high annealing temperature near 750 °C produce the greatest degree of (001) orientation, which gives rise to improved dielectric properties.