Analysis of silicon germanium vapor phase epitaxy kinetics

An empirical study of the selective vapor phase epitaxy kinetics of silicon germanium (Si1 − xGex) alloys is developed with no assumption on an atomistic mechanism. The growth kinetics are approached efficiently with a power rate law. Partial reaction orders are identified for GeH4, HCl and B2H6 precursors. A trend analysis of the partial reaction order highlights the fine characteristics of the Si1 − xGex growth kinetics. The power rate law evidences clearly the competition interactions between Si, Ge and B. Furthermore, a partial derivative study of the power rate law enabled an accurate sensitivity analysis of the selective process.