Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures

The effect of Sb on the growth behavior and the layer quality of graded SiGe buffer layers was studied at high-temperature CVD conditions. Sb was provided as SbCl5 additive to the GeCl4 precursor. Overall growth kinetics of SiGe did not change in the presence of Sb. By adding Sb the cross-hatch morphology was suppressed and smoother films could be grown. The smoothening effect and the incorporation of Sb into the SiGe layer were studied as a function of growth temperature and Sb concentration. The effect is attributed to the change in surface coverage with Sb adatoms.