| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670220 | Thin Solid Films | 2010 | 4 Pages |
Abstract
This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant conditions to improve the doping of the external base poly, and using an optimized non-selective epitaxy process with improved growth rate ratio of 1.7 between the polycrystalline silicon and monocrystalline silicon of the base, the maximum oscillation frequency fmax reaches 300 GHz.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. You, S. Van Huylenbroeck, N.D. Nguyen, A. Sibaja-Hernandez, R. Venegas, K. Van Wichelen, S. Decoutere, K. De Meyer,