Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670278 | Thin Solid Films | 2010 | 4 Pages |
Abstract
The microstructure of thin HfO2–Al2O3 nanolaminate high κ dielectric stacks grown by atomic vapor deposition has been studied by attenuated total reflection spectroscopy (ATR) and 8 eV spectroscopic ellipsometry (SE). The presence of Al2O3 below HfO2 prevents the crystallisation of HfO2 if an appropriate thickness is used, which depends on the HfO2 thickness. A thicker Al2O3 is required for thicker HfO2 layers. If crystallisation does occur, we show that the HfO2 signature in both ATR and 8 eV SE spectra allows the detection of monoclinic crystallites embedded in an amorphous phase.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Bonvalot, M. Kahn, C. Vallée, E. Gourvest, H. Abed, C. Jorel, C. Dubourdieu,