| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670315 | Thin Solid Films | 2010 | 4 Pages |
Abstract
InAs/GaAs quantum dots (QDs) with graded InxGa1 â xAs strained-reducing layer (SRL) are grown by metal-organic chemical vapor deposition, the effects of Indium (In) composition and thickness in InxGa1 â xAs on QD morphological characteristics and optical properties are investigated. Compared with InxGa1 â xAs SRL with fixed In content, gradient InxGa1âxAs SRL can further improve the growth quality of InAs QDs, enhance luminescence intensity and extend emission spectrum toward longer wavelength.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lirong Huang, Peng Tian, Yi Yu, Dexiu Huang,