| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670349 | Thin Solid Films | 2010 | 5 Pages |
Abstract
Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous SixNy layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in SixNy-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the SixNy layer beneath the Si layer is replaced by a SiO2 buried oxide layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima,