Article ID Journal Published Year Pages File Type
1670385 Thin Solid Films 2010 4 Pages PDF
Abstract

The effect of the anneal temperature on the Er3+/Tm3+ energy transfer and subsequent Er3+/Tm3+ luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal procedure necessary for optimum photoluminescence (PL) from the co-doped film is substantially different from that for only Er- or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate that this higher optimum anneal temperature is due to the anneal temperature dependent Er–Tm interactions. In addition, the optimization of combined ultrabroad Er/Tm luminescence was discussed controlling Er–Tm interactions which is tailored by the change of Er/Tm doping ratio and anneal temperature.

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Physical Sciences and Engineering Materials Science Nanotechnology
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