Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670385 | Thin Solid Films | 2010 | 4 Pages |
Abstract
The effect of the anneal temperature on the Er3+/Tm3+ energy transfer and subsequent Er3+/Tm3+ luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal procedure necessary for optimum photoluminescence (PL) from the co-doped film is substantially different from that for only Er- or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate that this higher optimum anneal temperature is due to the anneal temperature dependent Er–Tm interactions. In addition, the optimization of combined ultrabroad Er/Tm luminescence was discussed controlling Er–Tm interactions which is tailored by the change of Er/Tm doping ratio and anneal temperature.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Se-Young Seo, Kyung Joong Kim, Jung H. Shin,