Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670427 | Thin Solid Films | 2010 | 8 Pages |
Abstract
The growth of AlN nano-columns by ammonium nitridation of Al nano-squares embedded in SiO2 on Si(111) substrates was studied by high-resolution X-ray photoemission spectroscopy from a synchrotron radiation source and scanning electron microscopy (SEM). Selective nitridation of the Al nano-squares on the SiO2 mask was obtained in the temperature window of 600 °C–700 °C. The well-shaped AlN nano-column arrays with diameters confined by the lateral size of the Al nano-squares (~ 100 nm) were observed in SEM.
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Physical Sciences and Engineering
Materials Science
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Authors
B. Qi, B. Agnarsson, M. Göthelid, S. Ólafsson, H.P. Gíslason,