Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670461 | Thin Solid Films | 2010 | 6 Pages |
Abstract
The current experiment deposits Mo–Ru coatings with a Ti interlayer on silicon wafers by sputtering at 400 °C. The annealing treatments were conducted at 600 °C under atmospheres consisting of controlled oxygen contents with balanced nitrogen. After annealing in a 10 ppm O2–N2 atmosphere, surface roughness increased, apparently due to the formation of external island oxides. While annealing in a 220 ppm O2–N2 atmosphere, the relatively smooth surface was accompanied by the internal oxidation zone consisting of alternated oxygen rich and deficient layers.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yung-I Chen, Li-Chun Chang, Rong-Tan Huang, Bing-Nan Tsai, Yu-Chu Kuo,