Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670471 | Thin Solid Films | 2010 | 4 Pages |
Abstract
In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10− 4 Ω cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.
Related Topics
Physical Sciences and Engineering
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Authors
W.T. Yen, Y.C. Lin, P.C. Yao, J.H. Ke, Y.L. Chen,