| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670514 | Thin Solid Films | 2008 | 4 Pages |
Abstract
DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono–poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Katsuyoshi Washio,