| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670534 | Thin Solid Films | 2008 | 4 Pages |
Abstract
We report silicide and germanide technology for ohmic contacts and metal gates of MOSFETs in this paper. We have investigated the control technology of NiSi/Si contact properties by incorporating third elements such as Ge and C for future ULSI applications. The work function and resistivity of various Ni and Pt germanides have been also examined as metal gate materials. The low resistivity and tunable work function of these silicides and germanides are desirable for future CMOS devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shigeaki Zaima, Osamu Nakatsuka, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa,