Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670540 | Thin Solid Films | 2008 | 4 Pages |
Abstract
This work will focus on the use of Selective Epitaxial Growth (SEG) of Si and SiGe in multi-gate devices. We will demonstrate the necessity of using SEG in the processing of these narrow fin devices. Reductions of the source/drain resistance and Gate Induced Drain Leakage (GIDL) are the main advantages of using SEG. Although the use of SiGe SEG has little impact as mobility booster in narrow fin pMOS devices, it provides a significant reduction in contact resistance.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N. Collaert, R. Rooyackers, A. Hikavyy, A. Dixit, F. Leys, P. Verheyen, R. Loo, M. Jurczak, S. Biesemans,