| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670592 | Thin Solid Films | 2008 | 4 Pages |
Abstract
We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated.
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Authors
Wu-Ping Huang, Henry H. Cheng, Gregory Sun, Rui-Fa Lou, J.H. Yeh, Tzer-Min Shen,