| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670649 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Epitaxial ZnO thin films have been grown on (0001) sapphire substrates by pulsed laser deposition. The structural and electrical transport properties of the films are measured as a function of the growth temperature and substrate cleaning procedure. The XRD measurements reveal that the cleaning procedure affects drastically the twin formation. Its origin could be attributed to a residual hydrocarbon layer or defects (oh- or O vacancies) at the sapphire surface. The electrical transport characteristics of the films are found to depend moderately on the existence of twinning.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
C.S. Steplecaru, M.S. Martín-González, J.F. Fernández, J.L. Costa-Krämer,