Electrical characterisation of HfYO MIM-structures deposited by ALD

By an ALD process with the solid precursors HfCl4 and (CpCH3)3Y and the oxidant water Yttrium doped HfO2 was deposited on TiN layer on highly doped silicon. The films were analysed by ellipsometry, XRR, RBS and XRD. For the electrical characterisation, capacitance and I–V measurement on MIM structure were used. By doping the HfO2 with 6.2 at.% Yttrium and annealing the film at 500 °C in N2 the k-value increased by 60% for a 9.5 nm thick film, the leakage current also increased. The deposited amorphous film crystallises at 450 °C into the cubic phase.