Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1670689 | Thin Solid Films | 2009 | 4 Pages |
Abstract
In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing. The localized ZnO-deposited areas are reproducing the exact stencil mask patterns. A resistivity of around 5 × 10− 3 Ω cm is measured on ZnO layer. The as-deposited ZnO material is 97% transparent above the wavelength at 400 nm. ZnO nanostructures can thus be used as transparent electrodes for Si NCs embedded in the gate-oxide of MOS devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Barnabé, M. Lalanne, L. Presmanes, J.M. Soon, Ph. Tailhades, C. Dumas, J. Grisolia, A. Arbouet, V. Paillard, G. BenAssayag, M.A.F. van den Boogaart, V. Savu, J. Brugger, P. Normand,