| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670740 | Thin Solid Films | 2009 | 4 Pages |
Abstract
The influence of thickness on the structural, morphological and optoelectronic behavior of Mo-doped In2O3 films, prepared by spray pyrolysis was investigated. The films had the cubic crystal structure for all the thicknesses investigated although it was found that a change in the preferred orientation and growth mode, from 2D to 3D, has occurred with an increase of film thickness. A small degradation in the optical transmittance has been observed with the increase of film thickness. The variation of electrical resistivity, mobility and charge carrier concentration with film thickness were also studied and the results discussed.
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Authors
P. Prathap, N. Revathi, K.T. Ramakrishna Reddy, R.W. Miles,