Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO2 surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO2 and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.