Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces

HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.