| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670947 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume,