| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1670961 | Thin Solid Films | 2010 | 4 Pages |
Abstract
High-quality hydrogenated amorphous silicon films (a-Si:H) were deposited on quartz glass substrates by radio-frequency plasma-enhanced chemical vapor deposition method. The films were then annealed at 800 °C for 3 min by rapid thermal processing (RTP). As confirmed by X-ray diffractometry and Raman spectrometry, hydrogenated microcrystalline silicon films were obtained after the annealing procedure. The mechanism of the rapid solid-phase recrystallization of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state precursor radicals (silicon, SiH2 and SiH3).
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Authors
Xiaoyong Gao, Hongliang Feng, Qinggeng Lin, Liwei Zhang, Xuwei Liu, Jiantao Zhao, Yufeng Liu, Yongsheng Chen, Jinhua Gu, Shie Yang, Weiqiang Li, Jingxiao Lu,