Arsenic and phosphorus codiffusion during silicon microelectronic processes

Arsenic (As) and phosphorus (P) implantations are concurrently used to create the n-zones of recent microelectronic device pn-junctions. We studied the As–P codiffusion effect on the junction depths during the dopant activation process. As diffusion is accelerated during codiffusion. The acceleration magnitude depends on As concentration and varies during annealing time. Contrasting with usual transient-enhanced-diffusion phenomena, a time delay can be observed before As diffusion acceleration occurs. P diffusion shows no specific modification due to codiffusion. Its diffusion behavior can be understood considering the usual Fermi level and electrical effects linked to the time evolution of the two dopant distributions. The behavior of As during codiffusion is discussed using finite element simulations.