Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1671050 | Thin Solid Films | 2010 | 4 Pages |
Abstract
In this study, transparent conducting Al-doped zinc oxide (AZO) films with a thickness of 150 nm were prepared on Corning glass substrates by the RF magnetron sputtering with using a ZnO:Al (Al2O3: 2 wt.%) target at room temperature. This study investigated the effects of the post-annealing temperature and the annealing ambient on the structural, electrical and optical properties of the AZO films. The films were annealed at temperatures ranging from 300 to 500 °C in steps of 100 °C by using rapid thermal annealing equipment in oxygen. The thicknesses of the films were observed by field emission scanning electron microscopy (FE-SEM); their grain size was calculated from the X-ray diffraction (XRD) spectra using the Scherrer equation. XRD measurements showed the AZO films to be crystallized with strong (002) orientation as substrate temperature increases over 300 °C. Their electrical properties were investigated by using the Hall measurement and their transmittance was measured by UV-vis spectrometry. The AZO film annealed at the 500 °C in oxygen showed an electrical resistivity of 2.24 Ã 10â 3 Ω cm and a very high transmittance of 93.5% which were decreased about one order and increased about 9.4%, respectively, compared with as-deposited AZO film.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hyung Jun Cho, Sung Uk Lee, Byungyou Hong, Yong Deok Shin, Jin Young Ju, Hee Dong Kim, Mungi Park, Won Seok Choi,