| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671083 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Tin-doped indium oxide (ITO) films were deposited on polyethylene terephthalate substrates by RF superimposed DC magnetron sputtering using an ITO target composed of In2O3 (90 wt.%):SnO2 (10 wt.%). The total sputtering power was maintained at 70 W and the power ratio of RF/(RF + DC) was varied from 0 to 100% in steps of 25%. The discharge voltage and deposition rate decreased with increasing RF/(RF + DC) power ratio. The ITO film deposited at a 50% RF portion of the total power showed the lowest resistivity (3.18 × 10− 4 Ωcm), high transmittance (87.5%) and relatively good mechanical durability, which was evaluated using bending and scratch tests.
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Authors
S.I. Kim, T.D. Jung, P.K. Song,