| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671121 | Thin Solid Films | 2008 | 4 Pages |
Abstract
High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge H2-diluted SiH4 in the near atmospheric pressures without the use of any inert gases such as He. Highly crystallized features were observed using Raman scattering spectroscopy and X-ray diffraction (XRD). Observations by cross-sectional transmission electron microscopy (X-TEM) suggested that the Si polycrystallites were generated directly on the PET substrates without forming the incubation layers.
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Authors
M. Matsumoto, Y. Inayoshi, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima,