Simplified modulated evaporation process for the production of CuInS2 films with reduced substrate temperatures

CuInS2 films with sub-micrometer thickness have been grown onto soda-lime glass substrates from the elemental constituents by a modulated flux deposition procedure. A reduced substrate temperature of about 350 °C was used during the process. Morphological characterization of the films suggests the formation of an In-rich layer in a first step of the deposition process. Adequate modulation of the In and Cu evaporation fluxes during a second stage makes the film evolving to the ternary CuInS2 compound. The absence of any copper sulfur phases on the film surface would make unnecessary the use of any etching treatment after deposition of the film.