Interpretation of quasi-Fermi level splitting in Cu(Ga,In)Se2-absorbers by confocally recorded spectral luminescence and numerical modeling

Spectral room temperature photoluminescence (pl) of polycrystalline Cu(In,Ga)Se2 films (CIGSe) is evaluated with respect to optoelectronic properties and in particular for the determination of the splitting of quasi-Fermi levels (EFn − EFp). For lateral resolution of ≤ 1 µm a confocal pl-setup is used. The depth profile of the excess carrier densities determining the rates of radiative transitions strongly govern the spectral pl-shape which has been numerically modeled with a matrix transfer formalism. In this optical approach we discriminate for wave propagation and attenuation in a multilayer system between a plane-wave ansatz and a 3D-spherical formalism, depending on excitation area large or small/similar compared to the thickness of the absorber. In both cases re-absorption of photons in energetic regimes with absorption approaches unity, from which the splitting of the quasi-Fermi levels is preferentially deduced, substantially influence the spectral luminescence signal. For heterojunctions usually located at the light entrance side of the device our evaluation with good agreement reflects (EFn − EFp) in the vicinity of the barrier and thus indicates the maximum achievable open circuit voltage of the finally processed diode. Departures of the spectral pl from the idealized Bose-term signalize unfavorable carrier profiles and a depth dependence of optoelectronic absorber properties.