| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671205 | Thin Solid Films | 2009 | 4 Pages |
Abstract
The current-voltage characteristics in the temperature range 170 ÷ 305 K at the direct polarization of GaS-CdTe:Mn heterojunction were studied. The tunneling process of carriers determines the electrical current through the junction. The ratio of the diffusion coefficient and surface recombination velocity in the CdTe:Mn film from the interface of junction was determined from the spectral characteristics of short circuit current and absorption. The non-equilibrium carriers generated in the CdTe:Mn film at the interface of heterojunction at the temperature of 293 K recombine through two recombination levels. At low temperatures (T < 170 K) the concentration of carriers decreases and only one recombination level appears with the short recombination lifetime.
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Authors
I. Caraman, E. Cuculescu, M. Stamate, G. Lazar, V. Nedeff, I. Lazar, D. Rusu,