| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671207 | Thin Solid Films | 2009 | 4 Pages |
The present contribution deals with the influence of the copper concentration in Cu(In,Ga)Se2 (CIGSe) on the solar cells based on CIGSe/(PVD)In2S3 and CIGSe/(CBD)CdS. We find that, depending on the buffer layer, the optimum open circuit voltage (Voc) is not reached for the same copper concentration. The values of Voc for the CIGSe/(CBD)CdS solar cells are higher when the copper content is very close to stoichiometry (25%), whereas, the Voc values for CIGSe/(PVD)In2S3 solar cells attain their maximum for lower copper contents. On the other hand, contrary to the case of the (CBD)CdS buffer, the Jsc is strongly hindered for the (PVD)In2S3 buffered cells when the copper content is lowered. The study has been made for different absorber gallium contents and the evolution is coherent with the presence of a cliff at the CIGSe/(PVD)In2S3 interface.
