| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671211 | Thin Solid Films | 2009 | 4 Pages |
Abstract
Co-evaporated Cu(In,Ga)Se2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the PVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, R. Chouffot, J. Serhan, F. Couzinié-Devy, N. Barreau, J. Kessler,