| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671233 | Thin Solid Films | 2009 | 4 Pages |
Abstract
The interface of the SnO2/GaSe heterojunctions, having SnO2 layer obtained by different deposition methods have been studied using the photoluminescence and photocurrent spectral distribution. The SnO2/GaSe structures are photosensitive in the 1.7 ÷ 3.6 eV spectral range and reveal its maximum value for the heterojunctions with magnetron sputtered SnO2 layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Elmira Cuculescu, Igor Evtodiev, Mihail Caraman,