| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671289 | Thin Solid Films | 2010 | 5 Pages |
Abstract
We report on the effect of La0.5Sr0.5CoO3 (LSCO) bottom electrode to the dielectric properties of CaCu3Ti4O12 (CCTO) thin films grown on Ir/Ti/SiO2/Si substrates. Compared with the films grown directly on Ir/Ti/SiO2/Si substrates, the dielectric constant has been increased greatly about 100%, and the dielectric loss decreased to lower than 0.2 in the frequency range of 1-100Â kHz. The origin has been discussed in details based on the analysis of the X-ray diffraction and impedance spectra measurements. Results of the impedance spectra suggest that the absence of undesired interfacial layer between Ir/CCTO thin films might be one of the major reasons of the improvement of the dielectric properties when the LSCO was introduced as the bottom electrode.
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Authors
Z.H. Sun, C.H. Kim, H.B. Moon, Y.H. Jang, J.H. Cho,