| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671301 | Thin Solid Films | 2009 | 5 Pages |
Abstract
Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er3+ photoluminescence efficiency.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.F. Cerqueira, M. Losurdo, M. Stepikhova, P. Alpuim, G. Andres, A. Kozanecki, M.J. Soares, M. Peres,