Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.