Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC

Wide band gap InGaZn6O9 films of thickness ~ 350 nm were deposited on sapphire (0001) at room temperature by using the pulsed laser deposition technique. The transparent films showed the optical transmission of > 80% with the room temperature Hall mobility of ~ 10 cm2/V s and conductivity of 4 × 102 S/cm at a carrier density > 1020 cm− 3. The electrical properties as a function of deposition temperatures revealed that the conductivity and mobility almost retained up to the deposition temperature of 200 °C. The films annealed in different atmospheres suggested oxygen vacancy plays an important role in determining the electrical conductivity of the compound. Room temperature grown heterostructure of n-InGaZn6O9/p-SiC showed a good rectifying behavior with a leakage current density of less than 10− 9 A/cm2, current rectifying ratio of 105 with a forward turn on voltage ~ 3 V, and a breakdown voltage greater than 32 V.