| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671570 | Thin Solid Films | 2007 | 5 Pages |
Abstract
Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2–3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
T.H. Breivik, S. Diplas, A.G. Ulyashin, A.E. Gunnæs, B.R. Olaisen, D.N. Wright, A. Holt, A. Olsen,