| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671578 | Thin Solid Films | 2007 | 5 Pages |
Abstract
Diluted magnetic semiconductor epitaxial thin films of Zn1 − xMnxO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn2+ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Chikoidze, Y. Dumont, F. Jomard, O. Gorochov,