| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671599 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Intense electroluminescence from a spray deposited heavily tin-doped indium oxide (ITO)-n type silicon (Si) heterojunctions, presenting the properties of an induced p-n junction, has been observed. The role of the degenerated n-type ITO film as a good supplier of holes to maintain an inversion layer formed at the silicon interface is discussed. However, the physical mechanism responsible for a significantly higher quantum efficiency of the radiation emission from such structures is not clear. The explanation of this phenomenon, based on the confinement of carriers at the interface due to multi-point contacts between the ITO film and the silicon, is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Oleksandr Malik, Arturo I. Martinez, F.J. De la Hidalga-W,