| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671622 | Thin Solid Films | 2007 | 5 Pages |
Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon–oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amorphous. The film prepared at oxygen/argon flow rate ratio > 0.05 developed large crystallites of boric acid in localize areas of amorphous boron oxide matrices. These crystallites were unstable and at electron microscopic analysis they continuously transformed to a cubic HBO2 phase and then completely vanished leaving an underlying amorphous boron oxide film behind. The analyses indicate the coexistence of B6O, HBO2 crystallites and amorphous boron oxide matrices. Fourier transform infrared (FTIR) spectra revealed spectral bands of BOH, BO, BOB and BH groups. Nanohardness and elastic modulus of a film prepared at low oxygen concentration approach 30 and 300 GPa, respectively. These parameters however vary with deposition conditions.
