| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671701 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Low-sheet-resistance Ga-doped ZnO films with thickness between about 0.3 and 2 µm were prepared on glass substrates by ion-plating system, which can be also deposited on large-area substrate with a size of 1 m2. The electromagnetic interference (EMI) shielding effectiveness and transparency of the films were investigated. Hall effect measurements showed that a decrease in resistivity with thickness causes an effective decrease in sheet resistance of the films. With decreasing sheet resistance, the EMI shielding effectiveness of the films at a frequency of 2.45 GHz increased, and the highest shielding effectiveness was 47.4 dB. All of the films demonstrated visible transmission of more than 70%.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Takahiro Yamada, Toshiyuki Morizane, Tetsuhiro Arimitsu, Aki Miyake, Hisao Makino, Naoki Yamamoto, Tetsuya Yamamoto,