| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1671730 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2–3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Petr Lazar, Boriana Rashkova, Josef Redinger, Raimund Podloucky, Christian Mitterer, Christina Scheu, Gerhard Dehm,