Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1671762 | Thin Solid Films | 2010 | 5 Pages |
Abstract
Tungsten-doped tin oxide (SnO2:W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 × 10− 4 Ω cm was obtained, with carrier mobility of 65 cm2 V− 1 s− 1 and carrier concentration of 1.44 × 1020 cm− 3 in 3 wt.% tungsten-doping films annealed at 800 °C in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical band gap ranging from 4.05 eV to 4.22 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yanwei Huang, Guifeng Li, Jiahan Feng, Qun Zhang,